? silikron semiconductor c orporation 200 9 . 7 . 1 0 version: 1.1 page 1 of5 ss f 4004 absolute maximum ratings parameter max. units i d @t c = 25 ? c continuous d rain c urrent,vgs@10v 20 0 a i d @t c = 1 0 0 ? c continuous d rain c urrent,vgs@10v 14 0 i dm pulsed d rain c urrent 80 0 p d @t c = 2 5 ? c power d issipation 238 w lin ear d erating f actor 2.0 w / ? c v gs gate - to - source v oltage 20 v dv/dt p eak diode recovery voltage 31 v/ns e as single p ulse a valanche e nergy 52 0 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperatu re range C 5 5 to +175 ? c thermal resistance parameter min. typ. max. units r jc junction - to - case 0. 6 3 ? c/w r ja junction - to - a mbient 62 electrical characteristics @ tj = 25 ? c ( unless otherwise specified) parameter min. typ. max. units te st conditions bv dss drain - to - source b reakdown v oltage 40 v v gs =0v,i d =250a r ds(on) static drain - to - source o n - resistance 3. 5 4 m v gs =10v,i d = 3 0a v gs(th) gate t hreshold v oltage 2.0 4.0 v v ds =v gs ,i d =250a i dss drain - to - source l eakage current 2 u a v ds = 40 v,v gs =0v 1 0 v ds = 40 v,v gs =0v,t j = 1 5 0 ? c i gss gate - to - source f orward leakage 100 na v gs =20v gate - to - source r everse leakage - 100 v gs = - 20v ssf 4004 top view (to220) id= 200 a bv= 40 v rdson= 4 m max. feathers: ? advanced trench process technology ? special designed for convertors and power controls ? high density cell design for ultra low rdson ? fully characterized avalanche voltage and current ? avalanche energy 100% test description: the ssf 40 04 is a new generation of high voltage and low current n C channel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability . SSF4004 is assembled in high reliability and qualified assem bly house. application: ? p ower switching application ? com mercial - industrial application
? silikron semiconductor c orporation 200 9 . 7 . 1 0 version: 1.1 page 2 of5 ss f 4004 q g total g ate c harge 90 nc i d =30a v dd =30v v gs =10v q gs gat e - to - source charge 14 q gd gate - to - drain("miller") charge 24 t d(on) turn - on d elay t ime 18.2 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v t r rise t ime 15.6 t d(off) turn - off d elay t ime 70.5 t f fall t i me 13.8 c iss input c apacitance 3150 pf v gs =0v v ds =25v f=1.0mhz c oss output c apacitance 300 c rss reverse t ransfer c apacitance 240 source - drain ratings and characteristics parameter min. typ. max. units test conditions i s continuous source current. (body diode) 20 0 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current . (body diode) 800 v sd d iode forward voltage 1.3 v t j = 2 5 ? c,i s = 3 0 a,v gs =0v t rr reverse recovery time 57 ns t j = 2 5 ? c,i f = 57 a di/dt=100a/s q rr reverse recovery charge 107 c t on forward turn - on time intrinsic turn - on time is negligible (turn - on is dominated by ls + ld) gate charge t est c ircuit: eas test c ircuits: notes: repetitive rating; pu lse width limited by m ax junction temperature. t est condition: l =0. 3 mh, id = 57 a, vdd = 20 v pulse width300s; duty cycle1.5% rg = 25 ?? starting tj = 25c v d d r l r g 1 m a v g s v d d b v d s s l r g
? silikron semiconductor c orporation 200 9 . 7 . 1 0 version: 1.1 page 3 of5 ss f 4004 transfer characteristic cap ac i tance on resistance vs. junction temperature breakdown voltage vs. junction temperature switch waveforms: switch time test circuit
? silikron semiconductor c orporation 200 9 . 7 . 1 0 version: 1.1 page 4 of5 ss f 4004 gate charge source - drain diode forward voltage safe operation area max drain c urrent vs. junction temperature transient th ermal impedance curve
? silikron semiconductor c orporation 200 9 . 7 . 1 0 version: 1.1 page 5 of5 ss f 4004 to220 mechanical data:
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